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Cu wire bonding is one of the hottest trends in electronic packaging due to the cost and the electrical and thermal performance advantages of Cu wire over Au wire. However, there are many challenges to Cu wire bonding, one of which is the increased stress transmitted to the bond pad during ball bonding process. This high stress is not desirable as it leads to pad damage or cratering in the silicon...
Ball bonding processes are optimized on Al pads with a 25.4 ??m diameter Cu wire to obtain maximum average shear strengths of at least 120 MPa. To quantify the direct effect of bond force and ultrasound on the pad stress, ball bonding is performed on test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic signals are measured. By using a lower value of bond...
In conventional wire bonding process optimization, the crescent bond is tested by destructive pulling the loop and measure the pull force (PF) required to break the bond. While this method assures the final quality, it does not necessarily minimize production stoppages which can reduce throughput significantly. Many stoppages are caused by short-tail and tail-lift errors which in turn are caused by...
The tail breaking process is studied by investigating tail bond imprint micrographs. The imprints were made on Ag metallization (diepad) with Cu wire (Cu-Ag) and with Au wire (Au-Ag). In the Au-Ag case, Au wire residue was found on the diepad indicating fracture occurred in the Au wire. In the Cu-Ag case, no Cu residue was found on the imprint, but material fracture of the substrate metallization...
Ball bonding processes on test chips with Al metallized bonding pads are optimized with one Au and two Cu wire types, all 25 mum diameter, obtaining average shear strengths of more than 120 MPa. The process temperature is about 110degC. The results demonstrate that ball bonds made with Cu wire show at least 15% higher shear strength than those made with Au wire. The estimated maximum shear strength...
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