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Metallization of through silicon vias (TSVs) used for the wafer interconnection in three-dimensional integration possess usually a certain amount of tensile residual stresses which originate from the mismatch of the coefficients of thermal expansion between the metal and silicon. In this contribution, novel experimental approaches based on the synchrotron X-ray nanodiffraction and Raman spectroscopy...
Through Silicon Via (TSV) is a lead topic in interconnects and 3D integration research, mainly due to numerous anticipated advantages. However, several challenges must still be overcome if large scale production is to be achieved. In this work, we have studied effects of Bosch scallops concerning mechanical reliability for a specific TSV technology. The presence of scallops on the TSV wall modifies...
Through wafer interconnects (TWI) with diameters greater than 50 mum have the advantage of extremely low contact resistances. The mechanics of the layers inside the TWI has to be well understood order to avoid passivation cracks. Results of simulation and mechanical investigations are discussed in this paper.
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