Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
This paper presents a comparison study of three isolated DC/DC circuit topologies, LLC resonant circuit, phase shift bridge circuit and phase shift quasi switched capacitor (QSC) circuit. The device stress of three circuits is compared using total switching device power (SDP) which can be used as an indicator of circuit efficiency, device cooling requirement, device packaging requirement and cost...
Gallium Nitride (GaN) power devices become commercially available in recent years and they have demonstrated great potential in DC power supply applications. In this paper, the device loss of three GaN device based isolated DC/DC circuits, LLC circuit, dual active bridge (DAB) circuit and phase shift quasi switched capacitor (QSC) circuit, is investigated and compared using telecom power supply application...
The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by reviewing...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
This paper introduces a high step-up ratio isolated dc-dc circuit which can be used as an interface between 20 V-40 V PV panels and high voltage dc system, up to 1000 V. By combining the switched inductor (SL) and quasi switched capacitor (QSC) structures with the traditional isolated full bridge circuit, the 50 times boost ratio is realized with small turns ratio. In this case, the leakage inductance...
The Quasi-Switched-Capacitor (QSC) resonant converter has been proposed to serve as the isolated dc/dc stage of ac/dc power adapters for portable electronics. Compared to Flyback and LLC resonant converters, its features include: 1) the voltage stress on the primary-side switches is reduced to 2/3 of the input voltage, which is friendlier to low-voltage switches whose figure of merits is generally...
This paper presents a GaN Transistor based 90W ac/dc adapter with a Buck-PFC stage and an isolated Quasi-Switched-Capacitor (QSC) dc/dc stage. In the dc/dc stage, two different QSC converters are proposed. Compared to Flyback and LLC resonant converters, the QSC converters feature: 1) reduced voltage stress on the primary-side switches to 2/3 of the input voltage; 2) reduced voltage stress on the...
This paper presents the soft switching, frequency control, and bidirectional power flow of an isolated quasi-switched-capacitor (QSC) dc/dc converter which was proposed for automotive applications, connecting the high-voltage (HV) dc bus and the low-voltage (LV) dc bus. The converter employs a QSC dc/ac front-stage circuit with a 3:1 voltage step-down ratio, and a synchronous-rectifier, current-doubler...
In applications where batteries work together with power electronic circuits, the current ripple generated by the power electronics will be shared by both the battery and passive components in the circuit. The amount of ripple absorbed by the battery depends on its impedance at the switching frequency of power electronics. This paper presents an impedance based high frequency battery model derived...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.