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Doped GaAs is the most important material in semiconductor industry. In this paper, we demonstrated a nondestructive method to measure the conductivity of GaAs wafers using a compact microwave instrument. In the experiment, 8 different GaAs wafers with thickness larger than 350 mum, and with resistivities in the range of 1.33 times 10-3 Omegamiddotcm to 10.4 times 10-3 Omegamiddotcm were measured...
Electrical conductivities of micron-scale aluminum wires were quantitatively measured by a four-point atomic force microscope (AFM) probe. This technique is a combination of the principles of the four-point probe method and standard AFM. This technique was applied to the 99.999% aluminum wires with 350 nm thickness and different widths of 5.0, 25.0 and 50.0 μm. Since the small dimensions of the wires,...
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