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Recently, three dimensional integration circuits technology has received much attention because of the demands of gradually increasing functionality and performance in microelectronic packaging for different types of electronic devices. For 3D chip stacking, high density interconnections are required in high-performance electronic products. Though the bumping process used could be either electroplating...
As the demands of functionality and performance for electronic products increase, three-dimensional chip stacking with high-density I/O has received much attention. For high density interconnections packaging, solder micro bumps are adopted extensively. However, its process temperature is high during chip stacking process. High bonding temperature would be easy to lead chip damage and chip warpage...
In this study, various micro-bump-bonded structures with TCB + NCP processes were evaluated and developed. A commercial available snap-cure NCP material was applied for the joining processes study. Three types of micro bumps, Cu/Ni/Sn2.5Ag, Cu/Sn2.5Ag and Cu/Ni/Au- were fabricated and bonded to achieve joint structures of Cu/Ni/Sn2.5Ag/Ni/Cu, Cu/Ni/Sn2.5Ag/Au/Ni/Cu and Cu/Sn2.5Ag/Au/Ni/Cu. Moreover,...
As the demands for high density 3DIC stacking increase, a fine-pitch chip-to-chip interconnects is becoming imperative. In conventional flip-chip technology, anisotropic conductive film (ACF) has been used in place of solder and underfill for chip attachment to substrates in some applications, because it provides many advantages. Generally speaking, ACF consists of an adhesive polymer matrix with...
In order to meet the demands of high-performance, high-speed, small form factor and multi-function integration in portable electronic products, the development of packaging technology now trends toward system-in-package (SiP) technology. Three-dimension (3D) integrated circuit technology provides a way to integrate complex micro systems through vertical interconnections among individual devices/chips...
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