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The discovery that the magnetization of a perpendicularly magnetized nanomagnet can be reversed by an in-plane current via spin orbit torque (SOT) has opened a new way to manipulate magnetization at the nanoscale1. This novel switching mechanism has led to a concept of non-volatile magnetic memory MRAM, namely the SOT-MRAM, which combines low power, fast switching, reliability and large endurance2...
Magnetic vortex is characterized by a magnetization curling in-plane around a vortex core which points out of the plane.[1] Recently another topologic defect, skyrmion having nanometer scale size, attracted great interest since it can be moved by low current density and thus opening new routes for massive information storage devices.[2] However, skyrmions exist only within a relatively narrow range...
Spin-Torque Oscillators (STOs) have promising application as high frequency electronic devices. However, the relatively large linewidth exhibited in STOs devices is a prohibitive for applications. Devices with coupled magnetic layers seem adapted to tackle this problem, as the additional coupling energy improves the magnetic stability of the layers, and therefore reduce the linewidth. Indeed, it was...
The general purpose of spin-electronics is to take advantage of the spin of the electrons in addition to their electrical charge to conceive innovative electronic components. These components combine magnetic materials which are used as spin-polarizer or analyzer together with semiconductors or insulators. SPINTEC Laboratory works on the development of these components and their integration in innovative...
The dynamic state diagram for spin current-induced magnetization dynamics is presented for an out-of-plane magnetized (perpendicular) polarizer and an in-plane magnetized (planar) free layer as obtained from macrospin simulations. The state boundaries are compared upon using a constant spin polarization factor with an angular-dependent spin polarization factor g(θ MP ) as introduced by Slonczewski...
The main role played by the Pt buffer layer on the magnetic configuration of the [Pt/Co] multilayer, i.e. on the pattern consisting of closure domains, and the possibility of doubling HE by annealing the[Pt/Co]/NiFe system is shown.
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