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A new form of pancake bouncing is discovered in this work when a droplet impacts onto micro‐structured superhydrophobic surfaces in an environment pressure less than 2 kPa, and an unprecedented reduction of contact time by ≈85% is obtained. The mechanisms of forming this unique phenomenon are examined by combining experimental observation, numeical modelling and an improved theoretical model for the...
The thermal boundary resistance (TBR) between SiO2-GaN film-sapphire is reconstructed by 3ω method in the temperature range of 260–480 K. The TBR at SiO2/GaN film interface is obtained on different samples with different thickness SiO2 films at high frequency of 1 KHz–20 KHz and the TBR at GaN film/sapphire interface is isolated by extending the frequency to a wide range. The measured TBR with strong...
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