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Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.
The Fermi level of graphene in contact with the metal contact is a critically important factor for graphene-based device design. Fermi level pinning like behavior at the metal on a graphene can limit the contact resistance reduction and other device operations, especially in high workfunction metal cases. We report that this problem can be substantially alleviated by the hydrogen anneal at high pressure...
The graphene oxide composites with magnetic nanoparticles have attracted in energy storage, and electromagnetic shield and absorption (ESA) applications [1].
We show that scaling rules, quantum confinement in thin bodies, and the resulting gate leakage render imperative the use of low-dimensionality materials as channels in devices scaled beyond the 10 nm gate length. We then consider a few examples of two-dimensional materials of great interest, graphene and bilayer graphene, and show how the dielectric environment (gate and interlayer insulators, nearby...
The initial growth mechanism of Al2O3 films deposited by atomic layer deposition (ALD) using trimethylaluminum (TMA) and ozone as a precursor and an oxidant, respectively, on Highly Ordered Pyrolytic graphite (HOPG) has been investigated. Trimethylaluminum (TMA)/water ALD process has been reported to deposit Al2O3 along the step edges of HOPG while ozone process induce nucleation sites leading to...
Graphene is a new advanced material for microelectronics. Graphene films can be prepared by different techniques. One of the promising methods is the production of stable dispersions of graphene in water or organic solvents. We have developed a new approach for preparation of easily soluble expanded graphite using fluorinated graphite intercalation compounds as starting materials. Graphene sheets...
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