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Quaternary alloyed HfAlTiO thin (~ 4–5nm) films in the wide range of Ti content have been grown on Si substrates by Atomic Layer Deposition technique, and the effect of both the film composition and the interfacial reactions on the electrical properties of HfAlTiO films is investigated. It is shown that depending on the Ti content, the permittivity and the leakage current density I leak in...
TiO 2 coatings were grown on Ti and Si by Atomic Layer Deposition (ALD) from titanium ethoxide and water at 300°C in a wide range of the reaction cycles number N=100–2000. TiO 2 coatings were found to be amorphous at low value of N<300 while the coatings grown at N≥300 revealed anatase polycrystalline structure. The TiO 2 coatings bioactivity was evaluated by hydroxyapatite...
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