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The goal of this work is the improvement of an existing design-oriented model of the 5-contact vertical Hall-effect sensor integrated in CMOS technology. Such a model should facilitate the work of designers, permitting them to simulate the sensor, the biasing and processing electronics together with the same electrical simulator. In this paper, focus is put on two physical effects that alter the electrical...
In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical parameter. These definitions, which merely map a multigate geometry into the symmetric double-gate (DG) MOSFET topology, have been validated by extensive...
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