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A Si ultra-thin body (UTB) junctionless field-effect transistor (UTB-JLFET) with LG = 1 nm and LG = 3 nm have been demonstrated by solving the coupled driftdiffusion (DD) and density-gradient (DG) model. The simulation results show that the Si can be used in ultra-short channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule...
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