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Hole transport properties have been improved by using highly strained In 0.35 Ga 0.65 As channel double-modulation-doped heterostructures grown by molecular beam epitaxy. This structure provided both a high mobility of 354 cm 2 /(V s) and a high sheet hole concentration of 1.23 × 10 12 cm −2 at room temperature. Double-modulation-doped field effect transistors...