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This paper clarifies the effect of surrounding gate structure on soft error immunity in floating body type devices. Alpha-particle-induced soft error simulations were performed with surrounding gate, tri-gate and double gate transistors as transfer devices of DRAM cells. In case of surrounding gate transistor (SGT) cell, the loss of the stored charge in the storage node after an alpha-particle strike...
In this paper, the numerical analysis for the dependence of the subthreshold slope on the diameter of the Si pillar and the length of the overlap region in FC-SGT Flash memory cell is reported. As results, it is demonstrated that FC-SGT Flash memory cell has the steeper subthreshold characteristics than the conventional planar type cell. Therefore FC-SGT Flash memory cell is suitable for the multi-level...
In this paper, we propose for the first time a novel device structure known as the tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for Flash memory. In the TCG-SGT nonvolatile memory cell, the control gate, floating gate, drain and source are arranged vertically on the substrate. In addition, the control gate covers the outside of the floating gate. The body region is...
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