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A silicon-on-insulator (SOI) micro-electromechanical system (MEMS) accelerometer, complementary Metal oxide semiconductor (CMOS) readout circuit and simultaneous hermetic encapsulation using low temperature Cu-Cu bonding are investigated for 3D heterogeneous integration of MEMS and CMOS. The MEMS accelerometer is fabricated using bulk micromachining technology. A CMOS-based readout circuit is designed...
Design-for-manufacture (DFM) for thick gate oxide layout in a dual gate oxide product is investigated. Careless placement and layout for thick gate oxide transistors in the multigate oxide chip can cause significant yield loss. The root cause of the yield loss is that the thick gate oxide can impact the uniformity of the adjacent thin gate oxide thickness. Further experiments' results show that the...
In this paper, we propose a novel technique in modeling and analysis of biological cells to implement DRAM storage elements in the post-CMOS era. The motivation is based on the known characteristics of biological cells. By applying an electric pulse with a fixed duration, we may calculate the voltage across the cytoplasmic membrane, also called a cell membrane or plasma membrane, and the nuclear membrane...
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