The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers...
The literature describes various techniques for fabricating thin monocrystalline Si films without the need of sawing. Layer transfer using epitaxy on porous Si (PSI) and subsequent layer separation from the growth substrate is one particular attractive option. A 40 μm thick epitaxial Si cell from this so-called PSI process is capable of saving about 80 % of the Si that is consumed by a 180 μm-thick...
We show that aluminum oxide (Al2O3) layers deposited by thermal as well as by plasma-assisted atomic layer deposition (ALD) are very well suited for the effective surface passivation of p-type silicon wafers. Surface recombination velocities (SRVs) well below 10 cm/s are measured for both ALD variants. The SRV strongly increases with decreasing film thickness if the Al2O3 films are <;10 nm for...
Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.