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This paper deals with the leakage current variation occurring in Al/HfYOx/GaAs capacitors subjected to constant electrical stress. It is shown that the current-time characteristic of such structures follows a power-law logistic model that arises from an extension of the Curie-von Schweidler law. The proposed model is based on an equivalent electrical circuit representation of the degraded structure...
The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide...
Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.
Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental...
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