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In this paper, a summary of characterization results from a SPAD test chip is reported. The chip includes test arrays based on two different SPAD structures, having p+/n-well and p-well/n-iso active area. Devices with different shapes and sizes as well as arrays dedicated to cross-talk extraction are present. Measurement results show that SPADs of the second type have a slightly lower Dark Count Rate...
In this paper, crosstalk characterization results of single-photon avalanche diode (SPAD) arrays in CMOS 150nm technology are reported and discussed. SPADs are implemented in two different sizes (15.6 and 25.6μm pitch) and three guard ring widths (0.6, 1.1 and1.6μm). A SPAD array is composed of 25 (5×5) devices, which can be separately activated. Measurement results show that total crosstalk probability...
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