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The large angle tilt implant technique has been used in two different manners to optimize MOS transistor performance. Large-Angle-Tilt-Implanted drain (LATIDs) were invented to improve n-channel transistor hot carrier immunity and the large angle implanted halos were used to suppress the subthreshold leakage. In this paper, we propose a new transistor architecture which applies a blanket LATID implant...
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