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This paper presents the fabrication and optimization of tunnel oxide passivated contact with crystallized n+ polycrystalline Si (poly-Si) for high-efficiency large-area n-type front-junction Si solar cells. Starting with a baseline process, we optimized (a) the PECVD deposition precursor SiH4/PH3 flow rate, (b) the H2 gas volume ratio, (c) the crystallization annealing temperature, (d) the tunnel...
We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1??1014/cm2 at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4??1012/cm2 at 50 keV or dose of 9??1011/cm2 at 80 keV) through 500 ?? of silicon dioxide. The second Phosphorus...
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