We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1??1014/cm2 at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4??1012/cm2 at 50 keV or dose of 9??1011/cm2 at 80 keV) through 500 ?? of silicon dioxide. The second Phosphorus implantation compensates for the tail portion of the Boron ion implantation, so that the net Boron ion distribution will result in a thinner ??dead?? silicon layer and an elevated electric field near the silicon surface. We will compare test results from this newly developed thin-window with those from our previous development, where the thin junction was created using a single implantation of Boron ions (dose of 1??1014/cm2 at 10 keV) through a 500 ?? thick silicon dioxide. All testing was done in the U3C beam line at the National Synchrotron Light Source at Brookhaven National Laboratory.