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In this paper, we report Ge p- and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with NiGe source/drain (S/D) with high performance and low leakage current. The forward/reverse current ratio of the NiGe/n-Ge and NiGe/p-Ge junctions were \(\sim 10^{5}\) and \(\sim 2 \times 10^{4}\) at \(|V| = \pm \) 1 V, respectively. Interface state densities \(D_{\rm it}\) of Al2O3...
Both drain-side and source-side engineering by adding Nad and Pad layers to obtain a weak snapback characteristic nLDMOS are presented in this work. It is a novel method to reduce trigger voltage (Vt1) and to increase holding voltage (Vh). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage and holding voltage distributions...
The two steps RTP program for 32 nm NiPt silicide formation process has been evaluated to improve source-drain resistance (Rsd), resistance uniformity and device leakage reduction behavior. A lower RTP-1 process has been investigated over the Nickel rich silicide phase formation and physical defect reduction. A higher millisecond anneal (MSA) RTP-2 has been investigated of its process window on Nickel...
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