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We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantum-dash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the...
The authors present a numerical model to study the carrier dynamics of InAs/InP quantum dash (QDash) lasers. The model is based on single-state rate equations, which incorporates both, the homogeneous and the inhomogeneous broadening of lasing spectra. The numerical technique also considers the unique features of the QDash gain medium. This model has been applied successfully to analyze the laser...
The authors report on the effect of quantum-dash (Qdash) inhomogeneity on the characteristics of InAs/InP Qdash laser utilizing a single state rate equation model. The inhomogeneity is assumed to follow the Gaussian approximation. From our observation, an increased in Qdash inhomogeneity results in increasing of threshold current density and redshifting of the peak lasing wavelength. The lasing linewidth...
A systematic study of avalanche multiplication on a series of In 0.52Al0.48As p+-i-n+ and n +-i-p+ diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mum has been used to deduce effective ionization coefficients between 220 and 980 kVmiddotcm-1. The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk...
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