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To achieve a lower permittivity solid insulator for HV power apparatus, we have developed a polymer composite filled with nanoporous silica particles. This paper investigated the influence of nanopore size of the nanoporous-silica particles on particle porosity and permittivity of nanoporous-silica/epoxy composite (NanoPC). NanoPC was prepared by mixing epoxy resin and four kinds of nanoporous-silica...
Mesoporous-silica/epoxy composites consist of epoxy resin and the mesoporous-silica particles which have the micrometric particle-diameter and the nanometric pore-size. Mesoporous-silica/epoxy composite material can actualize nanoporous composite insulator. This paper presents the measurement results of specific gravity and dielectric permittivity for the mesoporous-silica/epoxy composites (MPC)....
This paper presents an attempt to show the effectiveness of nanoporous-silica composite in epoxy matrix for voltage-endurance and lower permittivity by numerical analysis. By finite element analysis of the static electric field, we estimated the permittivity of the nanoporous-silica composite insulator required to reduce the electric field enhancement around the GIS solid spacer. In order to achieve...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
Normally-off power MOSFET with low Rons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low Rons of 1.8 mOmegacm2 with a blocking voltage of 660 V. The effective channel mobility of this device is 90 cm2/Vs which corresponds to the channel resistance of 0.8 mOmegacm2. A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400...
We have developed a high performance pMOSFET with ALD-TiN/HfO2 gate stacks on (110) substrate using gate last process at low temperature. High work function and low gate leakage current are obtained. An extremely high mobility equivalent to P+poly-Si/SiO2 on (110) substrate (171 cm2/Vs at 0.5 MV/cm) is achieved with ALD-TiN/HfO2 on (110) substrate in the thinner Tinv region of 1.7 nm. Vth roll-off...
We have developed a dual metal gate CMOS technology with HfSix for nMOS and Ru for pMOS on HfO2 gate dielectric. These gate stacks show high mobility (100% of universal mobility for electron, 80% for hole at high fields) down to Tinv of 1.7 nm and symmetrical low Vt equivalent to poly-Si/SiO2. As a result, high drive currents of 780 muA/mum and 265 muA/mum at Ioff = 1 nA/mum are achieved for Vdd...
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