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In this work, we have investigated the performance of solar cells based on heterojunctions formed by Si and single-walled carbon nanotubes (SWNTs). Our findings indicate that SWNTs show the outstanding performance on transferring infrared light into electrical energy. In addition, the encapsulation of C60 fullerene inside SWNTs is found to significantly enhance the performance of solar cells through...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
Sub-1nm EOT and high electron mobility were realized at the same time with HfSix/HfO2 gate stacks. It was revealed that there exist two mobility degradation modes depending on the HfO2 thickness and the HfSix composition. One is the crystallization in the thick HfO2 case (Tinv > 1.6 nm). The other is the Hf penetration into the interfacial layer with the Si substrate (bottom-IFL) in the thin HfO...
A raised source/drain extension (RSDE) pFET on (110) Si wafer is demonstrated for the first time with in-situ doped selective epitaxy technology. Roll-off has been effectively improved, resulting from the elimination of ion channeling in (110) Si. Due to the hole mobility enhancement and parasitic resistance reduction, ion of 389muA/mum (Vd= -1.0 V) has been achieved at Lmin around 30nm extracted...
We propose HfSix/HfO2 gate stacks as the most suitable combination for high performance nMOSFETs. An equivalent work function (WF) to n+poly-Si was obtained by controlling Hf/Si ratio of the electrode. The highest electron mobility ever reported was achieved in the thinner Tinv region down to 1.6 nm by low temperature process without using plasma nitridation both for metal and high-k fabrication....
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