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We propose HfSix/HfO2 gate stacks as the most suitable combination for high performance nMOSFETs. An equivalent work function (WF) to n+poly-Si was obtained by controlling Hf/Si ratio of the electrode. The highest electron mobility ever reported was achieved in the thinner Tinv region down to 1.6 nm by low temperature process without using plasma nitridation both for metal and high-k fabrication....
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