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In silicon material with oxygen concentration in the range (4–9)×10 17 cm −3 , grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly dependent on neutron fluence up to Φ=10 18 n/cm 2 , value at which saturation occurs caused not by the exhaustion of dissolved...