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It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel thickness. We found that the structure has an acceptable programming window (33 µA/um) at shorter gate lengths. The retention time can be improved by using...
With the rapid development of electronics industry, the printed circuit board (PCB) is the most important indispensable components for various kinds of products such as military, medical, appliances and consumer electronics. At the beginning, the construction of integration of electronic components by PCB process is single layer and double layer process. Until now, the yield of multilayer process...
A three-dimensional system-in-package (3-D SiP) based on silicon carriers or an interposer is a fast-emerging technology that offers system design flexibility and the integration of heterogeneous technologies. A passive interposer, which is a way to bridge the feature gap between the integrated circuit (IC) and the package substrate, is a key building block for high performance 3-D systems. The need...
In order to fabricate flexible microelectronic devices, fabrication of metallization lines and metal electrodes on the flexible substrate is essential. For minimizing the size of device, the realization of metallization lines with the scale of a few micrometers on the flexible substrate is very important. In this study, pulse electroplating has been applied in order to metalize PI surfaces with Cu...
Through the experimentally validated inversion-layer mobility simulation, we devise an error-free version of Matthiessen's rule for a single-gate n-channel bulk MOSFET in the universal mobility region. The core of the new rule lies in a semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen's rule as a function of both the lowest subband population and...
Light trapping in amorphous silicon thin film solar cells has been an intensive study owing to the low absorption coefficient in near-infrared. We demonstrate a frontal pre-patterned substrate (PPS) on amorphous silicon solar cells, utilizing scalable colloidal lithography, to serve both functions of anti-reflection and light trapping effect. We show that a solar cell with front pre-patterned substrate...
The enhanced photoelectric conversion is demonstrated in nanostructured glass substrates for a-Si thin film solar cell. The nanostructured glass substrates were fabricated using nanosphere lithography and RIE technique. The nanostructure substrates provide antireflective and light scattering characteristics, which enhance the broadband light absorption, especially in near-infrared range. Finally we...
In this paper, the reaction couples were prepared to investigate the interaction between Sn and Cu substrate with various surface finishes. The studied interfacial systems contain Sn/Ni/Ag/Cu, Sn/Ag/Cu and Sn/Cu/Ag/Cu. The corresponding surface finish, Ag or Ni layer, is about 1~2μM. In the Sn/Ni/Ag/Cu reaction, the formed phase was Ni3Sn4 at first, indicating that Sn reacted with Ni at the Sn/Ni...
By means of the TEM images, the channel width of (001) silicon pMOSFETs is separated into the flat and rounded corner parts. The underlying stress distribution is obtained via a process simulation. Then, a systematic analysis of the measured drain current leads to a remarkable result: The hole mobility in the non-(001) corner is about two times higher than the (001) flat one, valid for all channel...
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