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Al–C–N thin films with different Al contents were deposited on Si (100) substrates by closed-field unbalanced reactive magnetron sputtering in the mixture of argon and nitrogen gases. These films were subsequently vacuum-annealed at 700°C and 1000°C, respectively. The microstructures of as-deposited and annealed films were characterized by X-ray diffraction (XRD) and high-resolution transmission electron...
A series of Al–C–N thin films with different Al contents were deposited on Si (100) substrates by closed field unbalanced reactive magnetron sputtering in the mixture of argon and nitrogen gases. Their phase configurations and structures were subsequently investigated by X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy measurement, cross-sectional field emission scanning electron...
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