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We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with...
This invited talk will review our work on the monolithic integration of the MOSFET and the thermo-optic (TO) based Mach-Zehnder switch (MZS) using the front-end process on the photonic SOI platform. This MOSFET was capable of driving the TO phase shifter because of its large current capability. By tuning the gate voltage of the MOSFET, the switching state of MZS was successfully controlled. We will...
We demonstrate the monolithic integration of MOSFETs with thermo-optic (TO) Mach-Zehnder switches on SOI platforms. Successful driving operation was achieved for the TO switch via MOSFETs, which is promising for realizing driver-on-chip large-scale circuit switches.
We present a novel 4-port optical switch which enables three connection states. The device consists of two Si-wire cross-bar switches, one oriented at right angles to the other. The three-way switching operation is demonstrated at the wavelength of 1550 nm.
We present a low-crosstalk operation of 2 × 2 thermo-optic switch with Si-wire waveguides, based on cascade connection of Mach-Zehnder interferometers. The lowest crosstalk levels of -50 dB and -30 dB are obtained for `bar' and `cross' switching states, respectively.
This talk will provide a high-level overview to redress the value of photonic technologies in the context of the looming energy issues, suggesting the potential of dynamic optical path switching along with enabling technologies.
Ultrafast cross-phase modulation induced by intersubband excitation was ~2-3 times enhanced when tuning probe wavelength from 1640 to 1360 nm, showing a ~300 nm broadband. Interband dispersion model explains wavelength dependence.
The refractive index of Si doped n-type InGaAs layers grown on InP substrates is studied. It is found that the numerical calculation can explain the carrier density dependence of the refractive index by considering the optical absorption change and the plasma effect.
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