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The smooth surface of an N-polar GaN/AlxGa1−xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8° toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1−xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure...
Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial...
IODP (Integrated Ocean Drilling Program) scientific drilling proposal 603 (NanTroSEIZE: Nankai Trough Seismogenic Zone Experiment) not only proposes drilling, coring, geological analyzing, and geophysical logging, but also mandates that several long term borehole monitoring systems (LTBMS) should be installed at Nankai trough, where we expect to encounter the mega splay fault and the locked region...
The aisle capping has been attracting attention as a method for reducing power consumption of an air-conditioning (A/C) system in data centers and central offices. This method designs airflow pattern so as to confine supplied cold air to cold aisles, by encircling it with top panels and wall panels. This paper discusses optimization of operational conditions for an A/C operation with the aisle capping...
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