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Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200–1500°C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown...