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A 64-unit Hall-effect sensor array capable of detecting magnetic beads is implemented in 0.18 µm CMOS process. Two Hall sensor implementations, one using n-wells and another using MOS transistors, are analyzed. The n-well implementation can detect a single 4.5 µm bead in .5 ms with a probability of error below 1% while the MOS implementation takes 2.5 ms to detect the same bead. Each array is compact...
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
A CMOS temperature sensor design to improve the sensitivity and linearity of the authors' previous work is presented. Based on the principle of double zero temperature coefficient (DZTC) points, a combined device is fabricated using 0.35 μm CMOS process with two voltage references, one current reference, and one temperature sensor. From -20 to 120°C, two voltage references provide temperature-stable...
During technology development, the study of ultra low-k (ULK) TDDB is important for assuring robust reliability. As the technology advances, several critical ULK TDDB issues were faced for the first time and needed to be addressed. First, the increase of ULK leakage current noise level induced by soft breakdown during stress was observed. Second, it was found that ULK had lower field acceleration...
Based on the CMOS proportional to absolute temperature principle, a combined device for voltage reference and temperature sensors is successfully implemented using a fully digital process. For a temperature range from 20 to 120degC, the experimental results show that the voltage reference has a temperature stable output of 717 mV and the associated temperature sensor has the sensitivity of 2.3 mV/degC...
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