The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively...
A 1- mu A-retention, 4-Mb SRAM with a thin-film-transistor (TFT) load cell, fabricated in a 0.5- mu m triple-poly-Si (first- and third-level W-polycide) double-Al CMOS technology is described. A 200-fA/b retention current is achieved. utilizing the PMOS-type TFT, in which the n/sup +/ diffusion area of the driver transistor acts as a gate electrode of the TFT. The RAM, which has a built-in voltage...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.