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In this work, Y 2 O 3 was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO 4 (a-IGZO) active layer. The properties of Y 2 O 3 were examined as a function of various processing parameters including plasma power, chamber gas conditions, and working pressure. The leakage current density for the Y 2 O 3 ...
A novel ZrO2/Si3N4 dual charge storage layer (DCSL) has been proposed for highly reliable multi-level cell (MLC) application. Separated charge storage and step-up potential well have been resulted from the ZrO2/Si3N4 DCSL. Threshold voltage (Vth) levels are controlled by the charge storage capacity of each CSL, instead of the amount of charge injection, making a superior multi-level Vth control possible...
The effect of dielectric constant of the PbTiO 3 dispersoid on the conductivity of Na 2 SO 4 has been probed. At the Curie temperature, 490 °C, PbTiO 3 undergoes ferroelectric to paraelectric phase transition followed by a sharp change in the dielectric constant. The Na 2 SO 4 –PbTiO 3 composites have been prepared at two different temperatures,...
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