The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
HfO 2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO 2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350°C. A slightly thinner HfO 2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeO...
When S-termination on a Ge(100) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.