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In this manuscript, Ge based dual metal double gate Tunnel Field Effect Transistor device has been investigated to overcome the challenges in conventional Si based TFET. This device gives a better drive current and an average Subthreshold slope using Ge channel. The performance analysis is done for various values of doping concentration and also for different hetero dielectric materials. It has very...
In this Paper, design and analysis of dielectric based Tunnel FET and the performance is analysed by using various High k dielectric materials. In this design Ultra Thin dielectric is used to increase the drive current of the Tunnel FET. The Ion/Ioff ratio is observed as 0.5×107. The main advantage of Tunnel FET is low OFF current which is achieved as 5.25×1016A/ßm. The ambipolarity is reduced. The...
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