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In this paper, shunt capacitive RF microelectromechanical systems (MEMS) switches are developed in III-V technology using tantalum nitride (TaN) and tantalum pentoxide (Ta2O5) for the actuation lines and the dielectric layers, respectively. A compositional, structural, and electrical characterization of the TaN and Ta2O5 films is preliminarily performed, demonstrating that they are valid alternatives...
In this work we develop surface-micromachined RF MEMS switches in III-V technology making use of materials which can be alternative to the ones commonly used. In this way, some technological constraints concerning RF MEMS reliability can be overcome. Specifically, we evaluate the potential of tantalum nitride (TaN) and tantalum pentoxide (Ta2O5) to be used for the switches actuation pads and dielectric...
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