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The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay...
Defects ∼0.5–0.8eV below the conduction band edge, contributing to trap-assisted tunneling and Frenkel–Poole transport have been reported for injection from n-type Si into SiO 2 –HfO 2 dielectrics. Band edge spectroscopic measurements, combined with X-ray absorption spectroscopy, have identified localized defect states at this energy below the conduction band edges of HfO 2 ...
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