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Conventional transmission electron microscopy (TEM) was conducted to identify crystallographic defects under some types of ''device-killing'' surface morphological faults on an epitaxial film grown on a 4H-SiC (0001) off-cut substrate. The ''comet'' fault composed of a nucleus and a tail is accompanied by 3C-SiC of zinc blende structure. The ''triangular defect'' characterized by its isosceles shape...