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Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous crystallization. In this paper, the change in the threshold voltage (VT) of memory cells in the RESET state before and after heating is used as a probe into the nature of the retention loss mechanisms. Two mechanisms for the retention loss behavior are identified, responsible...
In this paper, high-accuracy measurements of ultraviolet (UV)-induced refractive-index changes (plusmn3times10-7) in germanosilicate optical fiber as a function of intensity and exposure time are presented. To examine the early growth characteristics of the fiber, samples are irradiated with 244-nm light for 100 s at relatively low intensities (0.007-2.7 W/cm2). The combined growth data is then interpolated...
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention
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