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This brief proposes a new 45-nm erasable one-time programming cell with a self-aligned nitride (SAN) storage node for logic nonvolatile memory (NVM) applications. The CMOS fully logic-compatible cell was successfully demonstrated using 45-nm CMOS technology with a very small cell size of 0.1188 mum2. This cell-adapting source-side-injection programming scheme has a wide on/off window and superior...
A new 45 nm multiple time programming (MTP) cell with self-aligned nitride storage node has been proposed for logic NVM applications. The CMOS fully logic compatible cell has been successfully demonstrated in 45 nm CMOS technology with an ultra small cell size of 0.14 mum2. This cell adapting source side injection programming scheme has a wide on/off window and superior program efficiency. And it...
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