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The effect of Gallium (Ga) doping on CdS thin film properties and the performance of the corresponding Cu(InGa)Se2/CdS heterojunction solar cell has been investigated. The CdS thin films were deposited using a conventional chemical bath deposition (CBD) process. For a source of Ga dopant, a gallium nitrate (Ga(NO3)3) aqueous solution with Ga concentration from 5×10−4 to 2×10−3 M has been used. Ga...
In this work, the selenization of Mo/CuGa/In/Se (Se layer thickness: 1 μm) precursors followed by sulfurization was investigated. Particular emphasis was placed on the effect of the variation of the selenization temperature and sulfurization time on the morphology and compositional depth profiles of the resulting Cu(InGa)(SeS)2 (CIGSS) absorber; in addition, the current-voltage characteristics of...
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