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Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles are deposited onto intrinsic Si and laser processed using an 807.5nm continuous wave laser. During laser processing the particles as well as a surface-near substrate layer are melted to subsequently crystallize in the same orientation as the substrate...
Laser doping of crystalline Si (c‐Si) using highly doped Si nanoparticles (NPs) as the dopant source is investigated. For this purpose Si NPs are deposited onto c‐Si substrates from dispersion using a spin coater and subsequently laser annealed by scanning over the sample with a 248 nm line profile excimer laser. Scanning electron microscope (SEM) investigations demonstrate that the laser intensity...
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