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We study the physics of carrier backscattering in silicon nanowire transistors by using the numerical solution of the multisubband Boltzmann transport equation, where relevant scattering mechanisms by acoustic and intervalley phonons, surface roughness, and ionized impurities are included, accounting for intrasubband and intersubband, and elastic and inelastic transitions. The validity of several...
An efficient approach for the simulation of electronic transport in nanoscale transistors is presented based on the multi-subband Boltzmann transport equation under the relaxation time approximation, which takes into account the effects of quantum confinement and quasi-ballistic transport. This approach is applied to the study of electronic transport in circular gate-all-around silicon nanowire transistors...
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