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MOSFET harmonic distortion characteristics up to the cutoff frequency (fT) are measured and analyzed with the MOSFET model HiSIM. While distortion characteristics at low frequency are determined by carrier mobility, characteristics at high frequency are influenced by the time delay of carriers to form the channel. At low frequency, IP3 values, calculated using a quasi-static model, correspond to values...
In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have been used here to calculate a relatively simple set of transport characteristics, such as the average electron energy. The results have been contributed...
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