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We report on metal–organic vapor phase epitaxy (MOVPE) of (0001)InN layers simultaneously grown on a-plane (112¯0) and c-plane (0001) sapphire substrates. The substrates were nitridated at temperatures from 500°C to 1050°C prior to the growth of c-plane InN layers. Nitridation determined the polarity, the crystallinity, and the surface morphology of the InN layers. Nitridation temperatures above 800°C...
We compare InN layers grown directly on c ‐plane (0001) sapphire and on (0001) GaN templates using metal‐organic vapor phase epitaxy. InN grown on nitridated c ‐plane sapphire showed N‐polarity, while InN grown on c ‐plane GaN templates showed In‐polarity. N‐polar and In‐polar InN layers showed different surface morphology and crystallinity. N‐polar InN was smoothest when grown at higher growth temperatures,...
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