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This paper deals with optimum design criteria to minimize the torque ripple of a concentrated winding Synchronous Reluctance Motor (CW-SynRM) using Response Surface Methodology (RSM).
This paper deals with optimum design criteria for maximum torque density & minimum current density of a single phase line-start permanent-magnet motor (LSPMM) using RSM (Response Surface Methodology) & FEM (Finite Element Method). The focus of this paper is to find a design solution through the comparison of torque density and minimum current density resulting from rotor shape variations....
44 nm feature sized 8F2 1Gb DRAM is fully integrated and functioned for the first time with the smallest cell size of 0.015 um2. A novel cell-transistor structure and new DRAM process technologies are developed. In order to control the threshold voltage uniformity and body-bias sensitivity of saddle-fin cell-transistor, the channel doping profile and saddle-fin geometric dependency were analytically...
New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al 2O3. Thus prepared ZAZ TFT capacitors showed very small Tox.eq value of 6.3Aring and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TFT capacitor was thermally...
SnO 2−x gas sensors have been fabricated by thermal oxidation of Sn thin films. Sn thin films approximately 15 000A˚thick for commercial applications are deposited on a polished alumina substrate by using a high-vacuum resistance-heating evaporator. These films are oxidized at 500°C in various oxygen partial pressures in order to control the x value in SnO 2−x . The surface morphology...
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