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Si quantum dots (QDs) embedded in SiO 2 can be normally prepared by thermal annealing of SiO x (x<2) thin film at 1100°C in an inert gas atmosphere. In this work, the SiO x thin film was firstly subjected to a rapid irradiation of CO 2 laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100°C for 1h as usual. The...