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In this work, we have performed a thorough study of the mobility in `Si / s-Ge / Si' QW heterostructure pMOSFETs. We have been able to accurately fit experimental data obtained from ultra-thin strained-Ge QW FETs by theoretical calculations, in which the hole sub-band structure is calculated by 6??6 k.p Poisson-Schrodinger equation, and all the important scattering mechanisms (acoustic phonon, optical...
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