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The suitability of selenium annealing as a technique to introduce energy band gap gradients via sulfur-selenium substitution in Cu2ZnSnS4 (CZTS) films is evaluated. Compound co-sputtered CZTS precursors are annealed in selenium atmosphere at 425°C, either as-deposited or after a short time sulfur pre-anneal. The films are investigated by Raman spectroscopy and X-ray diffractometry, and the spatial...
Small grain compound-sputtered Copper Zinc Tin Sulfide (CZTS) precursors and large grain recrystallized CZTS solar cell absorbers are annealed at sub-recrystallization temperatures in selenium atmosphere to promote selenium diffusion into the CZTS films. Grazing incidence x-ray diffraction and Raman spectroscopy show the presence of two distinct sulfide and mixed sulfide/selenide phases, with the...
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